Method of fabricating semiconductor device, and developing apparatus using the method | Patent Publication Number 20030228740
US 20030228740 A1Publication DateDec 11, 2003
Original AssigneeSemiconductor Energy Laboratory
Current AssigneeSemiconductor Energy Laboratory
Inventor/ApplicantsIchiro Uehara
Masaharu Nagai
Masaharu Nagai
Ichiro Uehara
Masaharu Nagai
Masaharu Nagai
Ichiro Uehara
International
2
G03F
H01L
National
4
430/316
430/328
430/330
438/484.
Field of Search
0
- 1. A method of fabricating a semiconductor device comprising: nforming a resist pattern comprising a positive resist containing a photosensitizer, the resist pattern being formed over an object to be processed; irradiating the resist pattern with light within a range of photosensitive wavelength of the photosensitizer; and baking the resist pattern at a temperature not lower than a glass transition temperature of the positive resist containing the photosensitizer.
- 2. A method of fabricating a semiconductor device comprising: nforming a resist pattern comprising a positive resist containing a photosensitizer, the resist pattern being formed over an object to be processed; irradiating the resist pattern with light within a range of photosensitive wavelength of the photosensitizer; baking the resist pattern at a temperature not lower than a glass transition temperature of the positive resist containing the photosensitizer; and performing dry etching processing using the resist pattern as a mask.
- 3. A method of fabricating a semiconductor device comprising: nforming a resist pattern comprising a positive resist containing a photosensitizer, the resist pattern being formed over an object to be processed; irradiating the resist pattern with light within a range of photosensitive wavelength of the photosensitizer; baking the resist pattern at a temperature not lower than a glass transition temperature of the positive resist containing the photosensitizer; performing dry etching processing using the resist pattern as a mask; and removing the resist pattern.
- 6. A method of fabricating a semiconductor device according to claims 1, wherein the photosensitizer is a diazonaphthoquinone.
- 7. A method of fabricating a semiconductor device according to claims 2, wherein the photosensitizer is a diazonaphthoquinone.
- 8. A method of fabricating a semiconductor device according to claims 3, wherein the photosensitizer is a diazonaphthoquinone.
- 9. A method of fabricating a semiconductor device according to claims 4, wherein the photosensitizer is a diazonaphthoquinone.
- 14. A method of fabricating a semiconductor device comprising: nforming a semiconductor film over an insulating surface; forming a gate insulating film over the semiconductor film; forming a first-layer gate electrode film over the gate insulating film; forming a second-layer gate electrode film over the first-layer gate electrode film; forming a resist pattern comprising a positive resist containing a photosensitizer, the resist pattern being formed over the second-layer gate electrode film; irradiating the resist pattern with light within a range of photosensitive wavelength of the photosensitizer; baking the resist pattern at a temperature not lower than a glass transition temperature of the positive resist containing the photosensitizer; performing a first dry etching processing for etching the second-layer gate electrode film to form a second-layer gate electrode; performing a second dry etching processing for etching the first-layer gate electrode film to form a first-layer gate electrode; performing a third dry etching processing for etching the first-layer gate electrode and the second-layer gate electrode; and removing the resist pattern, wherein the first-layer gate electrode have a first shape tapered portion and the second-layer gate electrode have a second shape tapered portion after the third dry etching processing, and wherein the first-layer gate electrode extends beyond the second-layer gate electrode after the third dry etching processing.
- 15. A developing apparatus comprising: na developing unit for developing a resist containing a photosensitizer; a light irradiation unit for irradiating the resist pattern with light within a range of photosensitive wavelength of the photosensitizer; and a bake unit for baking at a temperature not lower than a glass transition temperature of the positive resist containing the photosensitizer.
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