Method for significant reduction of dislocations for a very high A1 composition A1GaN layer | Patent Publication Number 20060264009
US 20060264009 A1Patent NumberUS 07776636 B2
Application Number11411191
Filled DateApr 25, 2006
Priority DateApr 25, 2005
International
1
H01L
National
12
438/47
438/479.
438/22
438/93
438/36
257/E31.061
257/E31.065
257/E21.108
257/E31.124
438/46
257/E31.022
438/481
Field of Search
0
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