Semiconductor device and method of manufacturing semiconductor device | Patent Publication Number 20220328437
US 20220328437 A1Hajime Kataoka
Hajime KATAOKA
Kazuki YOSHIDA
A semiconductor device includes: a semiconductor element that includes an element main body having an element main surface facing one side in a thickness direction, and a first electrode arranged on the element main surface; a first insulating layer that is arranged over a peripheral edge portion of the first electrode and the element main surface and includes a first annular portion formed in an annular shape when viewed in the thickness direction; and a second insulating layer that is laminated on the first insulating layer, is made of a resin material, and includes a second annular portion overlapping with the first annular portion when viewed in the thickness direction.
1. A semiconductor device comprising: a semiconductor element that includes an element main body having an element main surface facing one side in a thickness direction, and a first electrode arranged on the element main surface; a first insulating layer that is arranged over a peripheral edge portion of the first electrode and the element main surface and includes a first annular portion formed in an annular shape when viewed in the thickness direction; and a second insulating layer that is laminated on the first insulating layer, is made of a resin material, and includes a second annular portion overlapping with the first annular portion when viewed in the thickness direction, wherein the first annular portion includes a first outer end boundary line extending in a first direction orthogonal to the thickness direction, and a second outer end boundary line connected to the first outer end boundary line and extending in a second direction orthogonal to both the thickness direction and the first direction, wherein the second annular portion includes a third outer end boundary line located outside the first outer end boundary line in the second direction and a fourth outer end boundary line located outside the second outer end boundary line in the first direction, when viewed in the thickness direction, wherein an end portion of the third outer end boundary line near the fourth outer end boundary line protrudes outward in the second direction as compared with a center portion in the first direction, and wherein an end portion of the fourth outer end boundary line near the third outer end boundary line protrudes outward in the first direction as compared with a center portion in the second direction. 7. A method of manufacturing a semiconductor device, comprising: providing a substrate that includes a semiconductor layer having a main surface facing one side in a thickness direction, and a first electrode arranged on the main surface; forming a first insulating layer on the side of the main surface of the substrate; and forming a second insulating layer on the side of the main surface of the substrate, wherein in the forming the first insulating layer, a first annular portion arranged over a peripheral edge portion of the first electrode and the main surface and formed in an annular shape when viewed in the thickness direction is formed, wherein the forming the second insulating layer includes: arranging a second annular portion that is formed in an annular portion overlapping with the first annular portion when viewed in the thickness direction and is made of a resin material; and heating the second annular portion, wherein the first annular portion includes a first outer end boundary line extending in a first direction orthogonal to the thickness direction, and a second outer end boundary line connected to the first outer end boundary line and extending in a second direction orthogonal to both the thickness direction and the first direction, wherein the second annular portion includes a third outer end boundary line located outside the first outer end boundary line in the second direction, and a fourth outer end boundary line located outside the second outer end boundary line in the first direction, when viewed in the thickness direction, wherein a first distance, which is a distance between the first outer end boundary line and the third outer end boundary line in the second direction, is set to be larger at an end portion near the fourth outer end boundary line than a center portion in the first direction, and wherein a second distance, which is a distance between the second outer end boundary line and the fourth outer end boundary line in the first direction, is set to be larger at an end portion near the third outer end boundary line than a center portion in the second direction.
This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2021-066371, filed on Apr. 9, 2021, the entire contents of which are incorporated herein by reference.
The present disclosure relates to a semiconductor device and a method of manufacturing the semiconductor device.
Various configurations have been proposed for semiconductor devices equipped with semiconductor elements. In the related art, an example of a conventional semiconductor device is disclosed. In the semiconductor device disclosed in the related art, a peripheral edge portion of an electrode formed on the surface of a semiconductor element is covered with an insulating film (a passivation film 5 and a polyimide film 11). A portion of the electrode on the semiconductor element, which is located inside the insulating film and is exposed from the insulating film, is referred to as an electrode pad portion.
In the manufacture of the semiconductor device, when a portion made of a resin material such as polyimide is formed, the resin material portion shrinks. When such shrinkage of the resin material portion occurs, it may affect the surroundings.
Some embodiments of the present disclosure provide a semiconductor device suitable for suppressing an influence of shrinkage of a resin material portion, and a method of manufacturing the semiconductor device.
According to an embodiment of the present disclosure, there is provided a semiconductor device including: a semiconductor element that includes an element main body having an element main surface facing one side in a thickness direction, and a first electrode arranged on the element main surface; a first insulating layer that is arranged over a peripheral edge portion of the first electrode and the element main surface and includes a first annular portion formed in an annular shape when viewed in the thickness direction; and a second insulating layer that is laminated on the first insulating layer, is made of a resin material, and includes a second annular portion overlapping with the first annular portion when viewed in the thickness direction, wherein the first annular portion includes a first outer end boundary line extending in a first direction orthogonal to the thickness direction, and a second outer end boundary line connected to the first outer end boundary line and extending in a second direction orthogonal to both the thickness direction and the first direction, wherein the second annular portion includes a third outer end boundary line located outside the first outer end boundary line in the second direction and a fourth outer end boundary line located outside the second outer end boundary line in the first direction, when viewed in the thickness direction, wherein an end portion of the third outer end boundary line near the fourth outer end boundary line protrudes outward in the second direction as compared with a center portion in the first direction, and wherein an end portion of the fourth outer end boundary line near the third outer end boundary line protrudes outward in the first direction as compared with a center portion in the second direction.
According to another embodiment of the present disclosure, there is provided a method of manufacturing a semiconductor device including: providing a substrate that includes a semiconductor layer having a main surface facing one side in a thickness direction, and a first electrode arranged on the main surface; forming a first insulating layer on the side of the main surface of the substrate; and forming a second insulating layer on the side of the main surface of the substrate, wherein in the forming the first insulating layer, a first annular portion arranged over a peripheral edge portion of the first electrode and the main surface and formed in an annular shape when viewed in the thickness direction is formed, wherein the forming the second insulating layer includes arranging a second annular portion that is formed in an annular portion overlapping with the first annular portion when viewed in the thickness direction and is made of a resin material; and heating the second annular portion, wherein the first annular portion includes a first outer end boundary line extending in the first direction orthogonal to the thickness direction, and a second outer end boundary line connected to the first outer end boundary line and extending in a second direction orthogonal to both the thickness direction and the first direction, wherein the second annular portion includes a third outer end boundary line located outside the first outer end boundary line in the second direction, and a fourth outer end boundary line located outside the second outer end boundary line in the first direction, when viewed in the thickness direction, wherein a first distance, which is a distance between the first outer end boundary line and the third outer end boundary line in the second direction, is set to be larger at an end portion near the fourth outer end boundary line than a center portion in the first direction, and wherein a second distance, which is a distance between the second outer end boundary line and the fourth outer end boundary line in the first direction, is set to be larger at an end portion near the third outer end boundary line than a center portion in the second direction.
Other features and advantages of the present disclosure will become more apparent with the detailed description given below with reference to the accompanying drawings.
Preferred embodiments of the present disclosure will be now described in detail with reference to the drawings.
In the present disclosure, the terms “first,” “second,” “third,” etc. are used merely as labels, and are not necessarily intended to order their objects.
In the present disclosure, the phases “a certain thing A is formed in a certain thing B” and “a certain thing A is formed on a certain thing B” include, unless otherwise specified, “a certain thing A is directly formed in a certain thing B” and “a certain thing A is formed in a certain thing B with another thing interposed between the certain thing A and the certain thing B.” Similarly, the phases “a certain thing A is arranged in a certain thing B” and “a certain thing A is arranged on a certain thing B” include, unless otherwise specified, “a certain thing A is directly arranged in a certain thing B” and “a certain thing A is arranged in a certain thing B with another thing interposed between the certain thing A and the certain thing B.” Similarly, the phase “a certain thing A is located on a certain thing B” includes, unless otherwise specified, “a certain thing A is located on the certain thing B with the certain thing A being in contact with the certain thing B” and “a certain thing A is located on a certain thing B with another thing interposed between the certain thing A and the thing B.” In addition, the phase “a certain thing A overlaps with a certain thing B when viewed in a certain direction” includes, unless otherwise specified, “a certain thing A overlaps entirely with a certain thing B” and “a certain thing A overlaps partially with a certain thing B.”
A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to
In the description of the semiconductor device A10, a thickness direction of the semiconductor element 2 is referred to as a “thickness direction z.” A direction orthogonal to the thickness direction z is referred to as a “first direction x.” A direction orthogonal to both the thickness direction z and the first direction x is referred to as a “second direction y.” As shown in
The first lead 1A, the second lead 1B, and the third lead 1C are formed, for example, by subjecting a metal plate to a punching process or a bending process. The constituent materials of the first lead 1A, the second lead 1B, and the third lead 1C may include, for example, either copper (Cu) or nickel (Ni), or an alloy thereof. The thicknesses of the first lead 1A, the second lead 1B, and the third lead 1C are, for example, 0.1 mm to 0.3 mm.
As shown in
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The semiconductor element 2 is an element that exhibits an electrical function of the semiconductor device A10. The type of the semiconductor element 2 is not particularly limited. In the present embodiment, the semiconductor element 2 is configured as a transistor. As shown in
The element main body 20 has a rectangular shape when viewed in the thickness direction z. The element main body 20 has an element main surface 201 and an element back surface 202. The element main surface 201 and the element back surface 202 face opposite to each other in the thickness direction z. The element main surface 201 faces the same side as the element mounting surface 111 of the element bonding portion 11 in the thickness direction z. Therefore, the element back surface 202 faces the element mounting surface 111.
The first electrode 21 and the third electrode 23 are arranged on the element main surface 201. The second electrode 22 is arranged on the element back surface 202. The constituent materials of the first electrode 21, the second electrode 22, and the third electrode 23 may include, for example, either copper or aluminum (Al), or an alloy thereof. In the present embodiment, the first electrode 21 is a source electrode, the second electrode 22 is a drain electrode, and the third electrode 23 is a gate electrode.
In the present embodiment, the first electrode 21 covers most of the element main surface 201. Specifically, the first electrode 21 is arranged in a region of the rectangular element main surface 201 excluding the peripheral edge portion and one corner portion (the lower right corner portion of
The second electrode 22 is electrically bonded to the element mounting surface 111 (the element bonding portion 11) via the second conductive bonding material 62. The second conductive bonding material 62 conductively bonds the element bonding portion 11 and the second electrode 22. The second conductive bonding material 62 is, for example, solder.
The semiconductor device A10 includes a wire 65. The wire 65 is electrically bonded to the third electrode 23 and the wire bonding portion 16 of the third lead 1C. The wire 65 conductively bonds the third electrode 23 and the third lead 1C.
As shown in
In the present embodiment, the insulating portion 3 includes a first insulating layer 31 and a second insulating layer 33. In the present embodiment, the first insulating layer 31 is arranged over a peripheral edge portion 211 of the first electrode 21, and the element main surface 201. In
The first insulating layer 31 includes a first annular portion 310. The first annular portion 310 has an annular shape corresponding to the outer peripheral edge of the first electrode 21. In the present embodiment, the first annular portion 310 includes a plurality of strip-shaped portions each extending in the first direction x or the second direction y with a substantially constant width. In the present embodiment, the first annular portion 310 has outer end boundary lines 311, 312, 313, 314, 315, and 316 and inner end boundary lines 321, 322, 323, 324, 325, and 326. Each of the outer end boundary lines 311, 312, 313, 314, 315, and 316 is a portion of an outer peripheral contour line of the first annular portion 310 when viewed in the thickness direction z. Each of the inner end boundary lines 321, 322, 323, 324, 325, and 326 is a portion of an inner peripheral contour line of the first annular portion 310 when viewed in the thickness direction z.
The outer end boundary line 311 is located on one side in the second direction y in the first annular portion 310 and extends in the first direction x. The outer end boundary line 312 is located on one side in the first direction x in the first annular portion 310 and extends in the second direction y. One side end of the outer end boundary line 312 in the second direction y is connected to one side end in the outer end boundary line 311 in the first direction x. The outer end boundary line 313 is located on the other side in the first direction x in the first annular portion 310 and extends in the second direction y. One side end of the outer end boundary line 313 in the second direction y is connected to the other side end of the outer end boundary line 311 in the first direction x. The outer end boundary line 314 is located on the other side in the second direction y in the first annular portion 310 and extends in the first direction x. The other side end of the outer end boundary line 314 in the first direction x is connected to the other side end of the outer end boundary line 313 in the second direction y. The outer end boundary line 311 and the outer end boundary line 314 correspond to a “first outer end boundary line” of the present disclosure. The outer end boundary line 312 and the outer end boundary line 313 correspond to a “second outer end boundary line” of the present disclosure.
In the present disclosure, “the outer end boundary line 311 (314) extends in the first direction x” means that the outer end boundary line 311 (314) extends in the first direction x as a whole. Therefore, in a case where most of the outer end boundary line 311 (314) extends along the first direction x, the outer end boundary line 311 (314) may include a portion extending in a direction different from the first direction xl. In the present disclosure, “the outer end boundary line 312 (313) extends in the second direction y” means that the outer end boundary line 312 (313) extends in the second direction y as a whole. Therefore, in a case where most of the outer end boundary line 312 (313) extends along the second direction y, the outer end boundary line 312 (313) may include a portion extending in a direction different from the second direction y.
The inner end boundary line 321 is located on one side in the second direction y in the first annular portion 310 and extends in the second direction y. The inner end boundary line 321 corresponds to the outer end boundary line 311 and is located inside the outer end boundary line 311 in the second direction y when viewed in the thickness direction z. The inner end boundary line 322 is located on one side in the first direction x in the first annular portion 310 and extends in the second direction y. One side end of the inner end boundary line 322 in the second direction y is connected to one side end of the inner end boundary line 321 in the first direction x. The inner end boundary line 322 corresponds to the outer end boundary line 312 and is located inside the outer end boundary line 312 in the first direction x when viewed in the thickness direction z. The inner end boundary line 323 is located on the other side in the first direction x in the first annular portion 310 and extends in the second direction y. One side end of the inner end boundary line 323 in the second direction y is connected to the other side end of the inner end boundary line 321 in the first direction x. The inner end boundary line 323 corresponds to the outer end boundary line 313 and is located inside the outer end boundary line 313 in the first direction x when viewed in the thickness direction z. The inner end boundary line 324 is located on the other side in the second direction y in the first annular portion 310 and extends in the first direction x. The other side end of the inner end boundary line 324 in the first direction x is connected to the other side end in the inner end boundary line 323 in the second direction y. The inner end boundary line 324 corresponds to the outer end boundary line 314 and is located inside the outer end boundary line 314 in the second direction y when viewed in the thickness direction z. The inner end boundary line 321 and the inner end boundary line 324 correspond to a “first inner end boundary line” of the present disclosure. The inner end boundary line 322 and the inner end boundary line 323 correspond to a “second inner end boundary line” of the present disclosure.
In the present disclosure, “the inner end boundary line 321 (324) extends in the first direction x” means that the inner end boundary line 321 (324) extends in the first direction x as a whole. Therefore, in a case where most of the inner end boundary line 321 (324) extends along the first direction x, the inner end boundary line 321 (324) may include a portion extending in a direction different from the first direction xl. In the present disclosure, “the inner end boundary line 322 (323) extends in the second direction y” means that the inner end boundary line 322 (323) extends in the second direction y as a whole. Therefore, in a case where most of the inner end boundary line 322 (323) extends along the second direction y, the inner end boundary line 322 (323) may include a portion extending in a direction different from the second direction y.
The inner end boundary line 325 is located near one side in the first direction x and near the other side in the second direction y in the first annular portion 310, and extends in the first direction x. One side end of the inner end boundary line 325 in the first direction x is connected to the other side end of the inner end boundary line 322 in the second direction y. The inner end boundary line 325 is located inside the inner end boundary line 322 in the first direction x when viewed in the thickness direction z. The inner end boundary line 326 is located near one side in the first direction x and near the other side in the second direction y in the first annular portion 310, and extends in the second direction y. The other side end of the inner end boundary line 326 in the second direction y is connected to the other side end of the inner end boundary line 325 in the first direction x. The inner end boundary line 326 is located on the opposite side of the inner end boundary line 321 with respect to the inner end boundary line 325 in the second direction y when viewed in the thickness direction z. Further, in the present embodiment, the inner end boundary line 326 is connected to the inner end boundary line 324. The inner end boundary line 325 corresponds to a “fifth inner end boundary line” of the present disclosure. The inner end boundary line 326 corresponds to a “sixth inner end boundary line” of the present disclosure. In the present disclosure, “the inner end boundary line 325 extends in the first direction x” means that the inner end boundary line 325 extends in the first direction x as a whole. Therefore, in a case where most of the inner end boundary line 325 extends along the first direction x, the inner end boundary line 325 may include a portion extending in a direction different from the first direction xl. In the present disclosure, “the inner end boundary line 326 extends in the second direction y” means that the inner end boundary line 326 extends in the second direction y as a whole. Therefore, in a case where most of the inner end boundary line 326 extends along the second direction y, the inner end boundary line 326 may include a portion extending in a direction different from the second direction y.
The outer end boundary line 315 is located near one side in the first direction x and near the other side in the second direction y in the first annular portion 310, and extends in the first direction x. One side end of the outer end boundary line 315 in the first direction x is connected to the other side end of the outer end boundary line 312 in the second direction y. The outer end boundary line 315 corresponds to the inner end boundary line 325 and is located outside the inner end boundary line 325 in the second direction y when viewed in the thickness direction z. The outer end boundary line 316 is located near one side in the first direction x and near the other side in the second direction y in the first annular portion 310, and extends in the second direction y. The other side end of the outer end boundary line 316 in the second direction y is connected to the other side end of the outer end boundary line 315 in the first direction x. The outer end boundary line 316 corresponds to the inner end boundary line 326 and is located outside the inner end boundary line 326 in the first direction x when viewed in the thickness direction z. Further, in the present embodiment, the outer end boundary line 316 is connected to the outer end boundary line 314. The outer end boundary line 315 corresponds to a “fifth outer end boundary line” of the present disclosure. The outer end boundary line 316 corresponds to a “sixth outer end boundary line” of the present disclosure. In the present disclosure, “the outer end boundary line 315 extends in the first direction x” means that the outer end boundary line 315 extends in the first direction x as a whole. Therefore, in a case where most of the outer end boundary line 315 extends along the first direction x, the outer end boundary line 315 may include a portion extending in a direction different from the first direction xl. In the present disclosure, “the outer end boundary line 316 extends in the second direction y” means that the outer end boundary line 316 extends in the second direction y as a whole. Therefore, in a case where most of the outer end boundary line 316 extends along the second direction y, the outer end boundary line 316 may include a portion extending in a direction different from the second direction y.
As shown in
The constituent material of the second insulating layer 33 is not particularly limited. In the present embodiment, the second insulating layer 33 is made of, for example, a resin material such as a polyimide resin. The thickness of the second insulating layer 33 is larger than the thickness of the first insulating layer 31. In some embodiments, the thickness of the second insulating layer 33 may be five to fifty times the thickness of the first insulating layer 31. The thickness of the second insulating layer 33 is, for example, 5 μm to 10 μm.
As shown in
The outer end boundary line 331 is located on one side in the second direction y in the second annular portion 330 and extends in the first direction x. The outer end boundary line 331 is located outside the outer end boundary line 311 in the second direction y when viewed in the thickness direction z.
The outer end boundary line 332 is located on one side in the first direction x in the second annular portion 330 and extends in the second direction y. One side end of the outer end boundary line 332 in the second direction y is connected to one side end of the outer end boundary line 331 in the first direction x. The outer end boundary line 332 is located outside the outer end boundary line 312 in the first direction x when viewed in the thickness direction z.
As shown in
The outer end boundary line 332 includes an outer end boundary line first portion 332A and an outer end boundary line overhanging portion 332E. The outer end boundary line first portion 332A extends linearly along the second direction y and occupies most of the outer end boundary line 332 except for the end portion thereof. The outer end boundary line overhanging portion 332E is connected to the outer end boundary line first portion 332A and is located at the end portion near the outer end boundary line 331. The outer end boundary line overhanging portion 332E is located outside the outer end boundary line first portion 332A in the first direction x. Therefore, in the outer end boundary line 332, an end portion (the outer end boundary line overhanging portion 332E) near the outer end boundary line 331 protrudes outward in the first direction x as compared with a center portion in the second direction y (the outer end boundary line first portion 332A). Further, the outer end boundary line overhanging portion 332E is connected to the outer end boundary line overhanging portion 331E. In
As shown in
Although detailed illustration and description are omitted, in the outer end boundary line 333, the end portion near the outer end boundary line 331 protrudes outward in the first direction x as compared with the center portion in the second direction y. As a result, a corner portion of the outer end boundary line 331 and the outer end boundary line 333 (the upper left corner portion in
The outer end boundary line 334 is located on the other side in the second direction y in the second annular portion 330 and extends in the first direction x. The other side end of the outer end boundary line 334 in the first direction x is connected to the other side end of the outer end boundary line 333 in the second direction y. The outer end boundary line 334 is located outside the outer end boundary line 314 in the second direction y when viewed in the thickness direction z.
Although detailed illustration and description are omitted, in the outer end boundary line 334, the end portion near the outer end boundary line 333 protrudes outward in the second direction y as compared with the center portion in the first direction x. Further, in the outer end boundary line 333, the end portion near the outer end boundary line 334 protrudes outward in the first direction x as compared with the center portion in the second direction y. The end portion of the outer end boundary line 334 near the outer end boundary line 333 is connected to the end portion of the outer end boundary line 333 near the outer end boundary line 334. As a result, the corner portion of the outer end boundary line 333 and the outer end boundary line 334 (the lower left corner portion in
In the present disclosure, “the outer end boundary line 331 (334) extends in the first direction x” means that the outer end boundary line 331 (334) extends in the first direction x as a whole. Therefore, in a case where most of the outer end boundary line 331 (334) extends along the first direction x, the outer end boundary line 331 (334) may include a portion extending in a direction different from the first direction xl. In the present disclosure, “the outer end boundary line 332 (333) extends in the second direction y” means that the outer end boundary line 332 (333) extends in the second direction y as a whole. Therefore, in a case where most of the outer end boundary line 332 (333) extends along the second direction y, the outer end boundary line 332 (333) may include a portion extending in a direction different from the second direction y.
The inner end boundary line 341 is located on one side in the second direction y in the second annular portion 330 and extends in the first direction x. The inner end boundary line 341 is located inside the inner end boundary line 321 in the second direction y when viewed in the thickness direction z. The inner end boundary line 342 is located on one side in the first direction x in the second annular portion 330 and extends in the second direction y. One side end of the inner end boundary line 342 in the second direction y is connected to one side end of the inner end boundary line 341 in the first direction x. The inner end boundary line 342 is located inside the inner end boundary line 322 in the first direction x when viewed in the thickness direction z. The inner end boundary line 343 is located on the other side in the first direction x in the second annular portion 330 and extends in the second direction y. One side end of the inner end boundary line 343 in the second direction y is connected to the other side end of the inner end boundary line 341 in the first direction x. The inner end boundary line 343 is located inside the inner end boundary line 323 in the first direction x when viewed in the thickness direction z. The inner end boundary line 344 is located on the other side in the second direction y in the second annular portion 330 and extends in the first direction x. The other side end of the inner end boundary line 344 in the first direction x is connected to the other side end of the inner end boundary line 343 in the second direction y. The inner end boundary line 344 is located inside the inner end boundary line 324 in the second direction y when viewed in the thickness direction z. The inner end boundary line 341 and the inner end boundary line 344 correspond to a “third inner end boundary line” of the present disclosure. The inner end boundary line 342 and the inner end boundary line 343 correspond to a “fourth inner end boundary line” of the present disclosure.
In the present disclosure, “the inner end boundary line 341 (344) extends in the first direction x” means that the inner end boundary line 341 (344) extends in the first direction x as a whole. Therefore, in a case where most of the inner end boundary line 341 (344) extends along the first direction x, the inner end boundary line 341 (344) may include a portion extending in a direction different from the first direction xl. In the present disclosure, “the inner end boundary line 342 (343) extends in the second direction y” means that the inner end boundary line 342 (343) extends in the second direction y as a whole. Therefore, in a case where most of the inner end boundary line 342 (343) extends along the second direction y, the inner end boundary line 342 (343) may include a portion extending in a direction different from the second direction y.
The inner end boundary line 345 is located near one side in the first direction x and near the other side in the second direction y in the second annular portion 330, and extends in the first direction x. One side end of the inner end boundary line 345 in the first direction x is connected to the other side end of the inner end boundary line 342 in the second direction y. The inner end boundary line 345 is located inside the inner end boundary line 325 in the second direction y when viewed in the thickness direction z. The inner end boundary line 346 is located near one side in the first direction x and near the other side in the second direction y in the second annular portion 330, and extends in the second direction y. The other side end of the inner end boundary line 346 in the second direction y is connected to the other side end of the inner end boundary line 345 in the first direction x. The inner end boundary line 346 is located inside the inner end boundary line 326 in the first direction x when viewed in the thickness direction z. Further, in the present embodiment, the inner end boundary line 346 is connected to the inner end boundary line 344.
As shown in
The inner end boundary line 346 includes an inner end boundary line first portion 346A and an inner end boundary line overhanging portion 346E. The inner end boundary line first portion 346A extends linearly along the second direction y and occupies most of the inner end boundary line 346 except for the end portion thereof. The inner end boundary line overhanging portion 346E is connected to the inner end boundary line first portion 346A and is located at the end portion near the inner end boundary line 345. The inner end boundary line overhanging portion 346E is located inside the inner end boundary line first portion 346A in the first direction x. Therefore, in the inner end boundary line 346, an end portion (the inner end boundary line overhanging portion 346E) near the inner end boundary line 345 protrudes inward in the first direction x as compared with a center portion in the second direction y (the inner end boundary line first portion 346A). Further, the inner end boundary line overhanging portion 346E is connected to the inner end boundary line overhanging portion 345E. In
As shown in
As shown in
The first metal layer 41 is arranged over the first electrode 21 and the insulating portion 3 (the second insulating layer 33). Specifically, the first metal layer 41 covers the first electrode pad portion 212 of the first electrode 21, which is located inside the inner end edge 302 of the insulating portion 3 (the second insulating layer 33) when viewed in the thickness direction z, and a portion of the second insulating layer 33 (the second annular portion 330). The first metal layer 41 includes a first extending portion 411 located on the outer peripheral portion when viewed in the thickness direction z. A first end edge 412, which is the outer peripheral edge of the first metal layer 41, is located between the outer end edge 301 and the inner end edge 302 of the insulating portion 3 (the second insulating layer 33) when viewed in the thickness direction z. The constituent material of the first metal layer 41 includes titanium (Ti). The thickness of the first metal layer 41 is, for example, 0.1 μm to 0.5 μm.
The second metal layer 42 is laminated on the first metal layer 41. The second metal layer 42 overlaps both the first electrode 21 and the insulating portion 3 when viewed in the thickness direction z. The second metal layer 42 covers a region located inside the first extending portion 411 except for the outer peripheral portion (the first extending portion 411) of the first metal layer 41 when viewed in the thickness direction z. As a result, the first extending portion 411 of the first metal layer 41 is not covered with the second metal layer 42, but is exposed from the second metal layer 42. The second metal layer 42 includes a second extending portion 421 located on the outer peripheral portion when viewed in the thickness direction z. A second end edge 422, which is the outer peripheral edge of the second metal layer 42, is located between the first end edge 412 of the first metal layer 41 and the inner end edge 302 of the insulating portion 3 (the second insulating layer 33) when viewed in the thickness direction z. The constituent material of the second metal layer 42 includes nickel. The thickness of the second metal layer 42 is, for example, 0.1 μm to 0.5 μm.
The third metal layer 43 is laminated on the second metal layer 42. The third metal layer 43 overlaps both the first electrode 21 and the insulating portion 3 when viewed in the thickness direction z. The third metal layer 43 covers a region located inside the second extending portion 421 except for the outer peripheral portion (the second extending portion 421) of the second metal layer 42 when viewed in the thickness direction z. As a result, the second extending portion 421 of the second metal layer 42 is not covered with the third metal layer 43, but is exposed from the third metal layer 43. A third end edge 431, which is the outer peripheral edge of the third metal layer 43, is located between the second end edge 422 of the second metal layer 42 and the inner end edge 302 of the insulating portion 3 (the second insulating layer 33) when viewed in the thickness direction z. The constituent material of the third metal layer 43 includes silver (Ag). The thickness of the third metal layer 43 is larger than either the thickness of the first metal layer 41 or the thickness of the second metal layer 42. The thickness of the third metal layer 43 is, for example, 0.5 μm to 1.5 μm.
As can be seen from
As shown in
The element side bonding portion 51 is bonded to the first electrode pad portion 212 of the first electrode 21 via the first conductive bonding material 61. The first conductive bonding material 61 conductively bonds the element side bonding portion 51 (the conductive member 5) and the first electrode pad portion 212. The first conductive bonding material 61 is, for example, solder.
As shown in
At the time of bonding the first electrode pad portion 212 and the element side bonding portion 51, while the protruding portion 511 is pressed against the first electrode pad portion 212 side, a sufficient amount of first conductive bonding material 61 is present around the protruding portion 511. As a result, the conduction between the element side bonding portion 51 and the first electrode pad portion 212 is appropriately maintained. Further, the concave portion 512 is provided on the lower surface of the element side bonding portion 51. As a result, even in a case where voids (vacancy) are present in the first conductive bonding material 61, the voids may be accommodated in the concave portion 512. Therefore, the voids in the first conductive bonding material 61 may be suppressed. Instead of the depicted concave portion 512, a through-hole may be formed through the element side bonding portion 51 in the thickness direction z to suppress the voids.
The lead side bonding portion 52 is bonded to the bonding portion 13 of the second lead 1B via the third conductive bonding material 63. The third conductive bonding material 63 conductively bonds the lead side bonding portion 52 (the conductive member 5) and the bonding portion 13 (the second lead 1B). The third conductive bonding material 63 is, for example, solder. As shown in
The intermediate portion 53 is located between the element side bonding portion 51 and the lead side bonding portion 52 in the second direction y. The intermediate portion 53 is connected to both the element side bonding portion 51 and the lead side bonding portion 52.
The sealing resin 7 covers a portion of each of the first lead 1A, the second lead 1B, and the third lead 1C, the semiconductor element 2, the insulating portion 3, the metal laminated portion 4, the conductive member 5, and the wire 65. The sealing resin 7 is made of, for example, a black epoxy resin.
As shown in
Next, an example of a method of manufacturing the semiconductor device A10 will be described below with reference to
First, as shown in
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As shown in
The outer end boundary line 332 includes an outer end boundary line first portion 332A and an outer end boundary line second portion 332B. The outer end boundary line second portion 332B is connected to both the outer end boundary line first portion 332A and the outer end boundary line straight line portion 331c (the outer end boundary line second portion 331B) and is located at the end portion near the outer end boundary line 331. The outer end boundary line second portion 332B is located outside the outer end boundary line first portion 332A in the first direction x. In the depicted example, the outer end boundary line second portion 332B includes an outer end boundary line straight line portion 332c and an outer end boundary line connecting portion 332d. The outer end boundary line straight line portion 332c extends linearly along the second direction y. The outer end boundary line connecting portion 332d is connected to both the outer end boundary line first portion 332A and the outer end boundary line straight line portion 332c. Therefore, with respect to the outer end boundary line 312 of the first annular portion 310 and the outer end boundary line 332 of the second annular portion 330, a distance (second distance D2) between the outer end boundary line 312 and the outer end boundary line 332 in the first direction x is set to be larger at the end portion near the outer end boundary line 331 than the center portion in the second direction y. The second distance D2 is not particularly limited. In the present embodiment, for example, the second distance D2 at the center portion in the second direction y (a distance between the outer end boundary line 312 and the outer end boundary line first portion 332A in the first direction x) is about 10 μm to 20 μm, and the second distance D2 at the end portion near the outer end boundary line 331 (a distance between the outer end boundary line 312 and the outer end boundary line straight line portion 332c in the first direction x) is about 15 μm to 35 μm.
Further, the outer end boundary line second portion 332B is also connected to the outer end boundary line second portion 331B. As a result, the corner portion (the outer end boundary line second portion 331B and the outer end boundary line second portion 332B) of the outer end boundary line 331 and the outer end boundary line 332 has a shape that protrudes outward in both the first direction x and the second direction y. The corner portion (the outer end boundary line second portion 331B and the outer end boundary line second portion 332B) of the outer end boundary line 331 and the outer end boundary line 332 shown in
Although detailed illustration and description are omitted, the end portion of the outer end boundary line 331 near the outer end boundary line 333 is located on the outside in the second direction y, similarly to the end portion (the outer end boundary line second portion 331B) of the outer end boundary line 331 near the outer end boundary line 332. Further, the end portion of the outer end boundary line 333 near the outer end boundary line 331 is located on the outside in the first direction x, similarly to the end portion (the outer end boundary line second portion 332B) of the outer end boundary line 332 near the outer end boundary line 331. As a result, the corner portion of the outer end boundary line 331 and the outer end boundary line 333 (the upper left corner portion of
Although detailed illustration and description are omitted, the end portion of the outer end boundary line 334 near the outer end boundary line 333 is located on the outside in the second direction y, similarly to the end portion (the outer end boundary line second portion 331B) of the outer end boundary line 331 near the outer end boundary line 332. Further, the end portion of the outer end boundary line 333 near the outer end boundary line 334 is located on the outside in the first direction x, similarly to the end portion (the outer end boundary line second portion 332B) of the outer end boundary line 332 near the outer end boundary line 331. As a result, the corner portion of the outer end boundary line 333 and the outer end boundary line 334 (the lower left corner portion of
As shown in
The inner end boundary line 346 includes an inner end boundary line first portion 346A and an inner end boundary line second portion 346B. The inner end boundary line second portion 346B is connected to both the inner end boundary line first portion 346A and the inner end boundary line straight line portion 345c (the inner end boundary line second portion 345B) and is located at the end portion near the inner end boundary line 345. The inner end boundary line second portion 346B is located inside the inner end boundary line first portion 346A in the first direction x. In the depicted example, the inner end boundary line second portion 346B includes an inner end boundary line straight line portion 346c and an inner end boundary line connecting portion 346d. The inner end boundary line straight line portion 346c extends linearly along the second direction y. The inner end boundary line connecting portion 346d is connected to both the inner end boundary line first portion 346A and the inner end boundary line straight line portion 346c. Therefore, with respect to the inner end boundary line 326 of the first annular portion 310 and the inner end boundary line 346 of the second annular portion 330, a distance (fourth distance D4) between the inner end boundary line 326 and the inner end boundary line 346 in the first direction x is set to be larger at the end portion near the inner end boundary line 345 than the center portion in the second direction y. The fourth distance D4 is not particularly limited. In the present embodiment, for example, the fourth distance D4 at the center portion in the second direction y (a distance between the inner end boundary line 326 and the inner end boundary line first portion 346A in the first direction x) is about 20 μm to 30 μm, and the fourth distance D4 at the end portion near the inner end boundary line 345 (a distance between the inner end boundary line 326 and the inner end boundary line straight line portion 346c in the first direction x) is about 30 μm to 50 μm.
Further, the inner end boundary line second portion 346B is also connected to the inner end boundary line second portion 345B. As a result, the corner portion (the inner end boundary line second portion 345B and the inner end boundary line second portion 346B) of the inner end boundary line 345 and the inner end boundary line 346 has a shape that protrudes inward in both the first direction x and the second direction y. The corner portion (the inner end boundary line second portion 345B and the inner end boundary line second portion 346B) of the inner end boundary line 345 and the inner end boundary line 346 shown in
Next, as shown in
Next, as shown in
Next, as shown in
Next, as shown in
Next, as shown in
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Next, as shown in
Thereafter, the semiconductor layer 20′ (the substrate 2′) is cut along a plane perpendicular to the first direction x and a plane perpendicular to the second direction y to be divided into a plurality of semiconductor elements 2. Next, a lead frame having a shape including the first lead 1A, the second lead 1B, and the third lead 1C is provided, and bonding of the semiconductor element 2, boding of the conductive member 5, and wire bonding of the wire 65 to the lead frame are performed. Next, the sealing resin 7 is formed by molding. Next, the lead frame is appropriately cut to separate the first lead 1A, the second lead 1B, and the third lead 1C from one another. Through the above steps, the semiconductor device A10 shown in
Next, the operation and effects of the present embodiment will be described.
In the manufacture of the semiconductor device A10, the first insulating layer 31 and the second insulating layer 33 are formed on the side of the main surface 201′ of the substrate 2′. In the step of forming the first insulating layer 31, the first annular portion 310 arranged over the peripheral edge portion 211 of the first electrode 21 as well as the main surface 201′ is formed. In the step of forming the second insulating layer 33, the second annular portion 330, which overlaps with the first annular portion 310 in the thickness direction z and is made of a resin material, is arranged. As shown in
Further, the corner portion of the outer end boundary line 331 and the outer end boundary line 332, the corner portion of the outer end boundary line 331 and the outer end boundary line 333, and the corner portion of the outer end boundary line 333 and the outer end boundary line 334, the shapes of which have been devised as described above, are located near the corner portion of the semiconductor element 2 when viewed in the thickness direction z. With such a configuration, even when the semiconductor layer 20′ is divided into a plurality of semiconductor elements 2 by cutting the semiconductor layer 20′, it is possible to appropriately protect the corner portion of the first insulating layer 31 (the first annular portion 310) in the vicinity of a dividing line.
In the step of arranging the second annular portion 330 in the step of forming the second insulating layer 33, the outer end boundary line 331 includes the outer end boundary line first portion 331A and the outer end boundary line second portion 331B. The outer end boundary line first portion 331A extends linearly along the first direction x. The outer end boundary line second portion 331B is connected to the outer end boundary line first portion 331A and is located at the end portion near the outer end boundary line 332. The outer end boundary line second portion 331B is located outside the outer end boundary line first portion 331A in the second direction y. The outer end boundary line 332 includes the outer end boundary line first portion 332A and the outer end boundary line second portion 332B. The outer end boundary line first portion 332A extends linearly along the second direction y. The outer end boundary line second portion 332B is connected to both the outer end boundary line first portion 332A and the outer end boundary line second portion 331B and is located at the end portion near the outer end boundary line 331. The outer end boundary line second portion 332B is located outside the outer end boundary line first portion 332A in the first direction x. As a result, the corner portion (the outer end boundary line second portion 331B and the outer end boundary line second portion 332B) of the outer end boundary line 331 and the outer end boundary line 332 has a shape that protrudes outward in both the first direction x and the second direction y. Such a configuration can be relatively easily addressed by changing the shape of the corner portion of the second annular portion 330.
In the step of arranging the second annular portion 330 in the step of forming the second insulating layer 33, as shown in
In the step of arranging the second annular portion 330 in the step of forming the second insulating layer 33, the inner end boundary line 345 includes the inner end boundary line first portion 345A and the inner end boundary line second portion 345B. The inner end boundary line first portion 345A extends linearly along the first direction x. The inner end boundary line second portion 345B is connected to the inner end boundary line first portion 345A and is located at the end portion near the inner end boundary line 346. The inner end boundary line second portion 345B is located inside the inner end boundary line first portion 345A in the second direction y. The inner end boundary line 346 includes the inner end boundary line first portion 346A and the inner end boundary line second portion 346B. The inner end boundary line first portion 346A extends linearly along the second direction y. The inner end boundary line second portion 346B is connected to both the inner end boundary line first portion 346A and the inner end boundary line second portion 345B and is located at the end portion near the inner end boundary line 345. The inner end boundary line second portion 346B is located inside the inner end boundary line first portion 346A in the first direction x. As a result, the corner portion (the inner end boundary line second portion 345B and the inner end boundary line second portion 346B) of the inner end boundary line 345 and the inner end boundary line 346 has a shape that protrudes inward in both the first direction x and the second direction y. Such a configuration can be relatively easily addressed by changing the shape of the corner portion of the second annular portion 330.
In this modification, in the step of forming the second insulating layer 33 for manufacturing the semiconductor device, the shape of the second annular portion 330 when the second annular portion 330 is arranged is different from that of the above embodiment. As shown in
As shown in
The outer end boundary line 332 includes the outer end boundary line first portion 332A and the outer end boundary line second portion 332B, but the outer end boundary line second portion 332B has a configuration different from that of the above embodiment. In this modification, the outer end boundary line second portion 332B has an arc shape, is connected to the linear outer end boundary line first portion 332A, and is located outside the outer end boundary line first portion 332A in the first direction x. Therefore, with respect to the outer end boundary line 312 of the first annular portion 310 and the outer end boundary line 332 of the second annular portion 330, the distance (the second distance D2) between the outer end boundary line 312 and the outer end boundary line 332 in the first direction x is set to be larger at the end portion near the outer end boundary line 331 than the center portion in the second direction y. Further, the outer end boundary line second portion 332B is also connected to the outer end boundary line second portion 331B. In
Although detailed illustration and description are omitted, the end portion of the outer end boundary line 331 near the outer end boundary line 333 has an arc shape and is located on the outside in the second direction y, similarly to the end portion (the outer end boundary line second portion 331B) of the outer end boundary line 331 near the outer end boundary line 332. Further, the end portion of the outer end boundary line 333 near the outer end boundary line 331 has an arc shape and is located on the outside in the first direction x, similarly to the end portion (the outer end boundary line second portion 332B) of the outer end boundary line 332 near the outer end boundary line 331. As a result, the corner portion of the outer end boundary line 331 and the outer end boundary line 333 (the upper left corner portion of
Although detailed illustration and description are omitted, the end portion of the outer end boundary line 334 near the outer end boundary line 333 has an arc shape and is located on the outside in the second direction y, similarly to the end portion (the outer end boundary line second portion 331B) of the outer end boundary line 331 near the outer end boundary line 332. Further, the end portion of the outer end boundary line 333 near the outer end boundary line 334 has an arc shape and is located on the outside in the first direction x, similarly to the end portion (the outer end boundary line second portion 332B) of the outer end boundary line 332 near the outer end boundary line 331. As a result, the corner portion of the outer end boundary line 333 and the outer end boundary line 334 (the lower left corner portion of
As shown in
The inner end boundary line 346 includes the inner end boundary line first portion 346A and the inner end boundary line second portion 346B, but the inner end boundary line second portion 346B has a configuration different from that of the above embodiment. In this modification, the inner end boundary line second portion 346B has an arc shape, is connected to the linear inner end boundary line first portion 346A, and is located inside the inner end boundary line first portion 346A in the first direction x. Therefore, with respect to the inner end boundary line 326 of the first annular portion 310 and the inner end boundary line 346 of the second annular portion 330, the distance (the fourth distance D4) between the inner end boundary line 326 and the inner end boundary line 346 in the first direction x is set to be larger at the end portion near the inner end boundary line 345 than the center portion in the second direction y. Further, the inner end boundary line second portion 346B is also connected to the inner end boundary line second portion 345B. In
In the method of manufacturing the semiconductor device of this modification, with respect to the second annular portion 330 arranged so as to overlap with the first annular portion 310 in the step of forming the second insulating layer 33, the distance (the first distance D1) between the outer end boundary line 311 of the first annular portion 310 and the outer end boundary line 331 of the second annular portion 330 in the second direction y is larger at the end portion near the outer end boundary line 332 than the center portion in the first direction x. Further, the distance (the second distance D2) between the outer end boundary line 312 of the first annular portion 310 and the outer end boundary line 332 of the second annular portion 330 in the first direction x is larger at the end portion near the outer end boundary line 331 than the center portion in the second direction y. As a result, the second annular portion 330 is larger in volume than the other portions outside the corner portion of the outer end boundary line 331 and the outer end boundary line 332. With such a configuration, after the second annular portion 330 is heat-treated, even in a case where the second annular portion 330 shrinks at the corner portion of the outer end boundary line 331 and the outer end boundary line 332, the state of covering the first insulating layer 31 (the first annular portion 310), which is a lower layer, is maintained, which can prevent the first insulating layer 31 from being exposed. Therefore, it is possible to suppress the influence of shrinkage of the second annular portion 330 (the second insulating layer 33) which is the resin material portion. In addition, in the range of the same configuration as that of the above embodiment, the same operation and effects as those of the above embodiment can be obtained.
In this modification, in a step of forming the second insulating layer 33 of the manufacture of the semiconductor device, the shape of the second annular portion 330 when the second annular portion 330 is arranged is different from that of the above embodiment.
As shown in
The outer end boundary line 332 includes the outer end boundary line first portion 332A and the outer end boundary line second portion 332B, but the outer end boundary line second portion 332B has a configuration different from that of the above embodiment. In this modification, the outer end boundary line second portion 332B forms a portion of a polygon (a pentagon in the depicted example), is connected to the linear outer end boundary line first portion 332A, and is located outside the outer end boundary line first portion 332A in the first direction x. Therefore, with respect to the outer end boundary line 312 of the first annular portion 310 and the outer end boundary line 332 of the second annular portion 330, the distance (the second distance D2) between the outer end boundary line 312 and the outer end boundary line 332 in the first direction x is set to be larger at the end portion near the outer end boundary line 331 than the center portion in the second direction y. Further, the outer end boundary line second portion 332B is also connected to the outer end boundary line second portion 331B. In
Although detailed illustration and description are omitted, the end portion of the outer end boundary line 331 near the outer end boundary line 333 forms a portion of a polygon (a pentagon) and is located on the outside in the second direction y, similarly to the end portion (the outer end boundary line second portion 331B) of the outer end boundary line 331 near the outer end boundary line 332. Further, the end portion of the outer end boundary line 333 near the outer end boundary line 331 forms a portion of a polygon (a pentagon) and is located on the outside in the first direction x, similarly to the end portion (the outer end boundary line second portion 332B) of the outer end boundary line 332 near the outer end boundary line 331. As a result, the corner portion of the outer end boundary line 331 and the outer end boundary line 333 has a shape that protrudes outward in both the first direction x and the second direction y, similarly to the corner portion of the outer end boundary line 331 and the outer end boundary line 332.
Although detailed illustration and description are omitted, the end portion of the outer end boundary line 334 near the outer end boundary line 333 forms a portion of a polygon (a pentagon) and is located on the outside in the second direction y, similarly to the end portion (the outer end boundary line second portion 331B) of the outer end boundary line 331 near the outer end boundary line 332. Further, the end portion of the outer end boundary line 333 near the outer end boundary line 334 forms a portion of a polygon (a pentagon) and is located on the outside in the first direction x, similarly to the end portion (the outer end boundary line second portion 332B) of the outer end boundary line 332 near the outer end boundary line 331. As a result, the corner portion of the outer end boundary line 333 and the outer end boundary line 334 has a shape that protrudes outward in both the first direction x and the second direction y, similarly to the corner portion of the outer end boundary line 331 and the outer end boundary line 332.
As shown in
The inner end boundary line 346 includes the inner end boundary line first portion 346A and the inner end boundary line second portion 346B, but the inner end boundary line second portion 346B has a configuration different from that of the above embodiment. In this modification, the inner end boundary line second portion 346B forms a portion of a polygon (a pentagon in the depicted example), is connected to the linear inner end boundary line first portion 346A, and is located inside the inner end boundary line first portion 346A in the first direction x. Therefore, with respect to the inner end boundary line 326 of the first annular portion 310 and the inner end boundary line 346 of the second annular portion 330, the distance (the fourth distance D4) between the inner end boundary line 326 and the inner end boundary line 346 in the first direction x is set to be larger at the end portion near the inner end boundary line 345 than the center portion in the second direction y. Further, the inner end boundary line second portion 346B is also connected to the inner end boundary line second portion 345B. In
In the method for manufacturing the semiconductor device of this modification, with respect to the second annular portion 330 arranged so as to overlap with the first annular portion 310 in the step of forming the second insulating layer 33, the distance (the first distance D1) between the outer end boundary line 311 of the first annular portion 310 and the outer end boundary line 331 of the second annular portion 330 in the second direction y is larger at the end portion near the outer end boundary line 332 than the center portion in the first direction x. Further, the distance (the second distance D2) between the outer end boundary line 312 of the first annular portion 310 and the outer end boundary line 332 of the second annular portion 330 in the first direction x is larger at the end portion near the outer end boundary line 331 than the center portion in the second direction y. As a result, the second annular portion 330 is larger in volume than the other portions outside the corner portion of the outer end boundary line 331 and the outer end boundary line 332. With such a configuration, after the second annular portion 330 is heat-treated, even in a case where the second annular portion 330 shrinks at the corner portion of the outer end boundary line 331 and the outer end boundary line 332, the state of covering the first insulating layer 31 (the first annular portion 310), which is a lower layer, is maintained, which can prevent the first insulating layer 31 from being exposed. Therefore, it is possible to suppress the influence of shrinkage of the second annular portion 330 (the second insulating layer 33) which is the resin material portion. In addition, in the range of the same configuration as that of the above embodiment, the same operation and effects as those of the above embodiment can be obtained.
In the first annular portion 310, the shapes of the end portions of the outer end boundary lines 311 to 314 and the inner end boundary lines 325 and 326 are different from those of the above embodiment. As shown in
The outer end boundary line 312 includes an outer end boundary line first portion 312A and an outer end boundary line second portion 312B. The outer end boundary line first portion 312A extends linearly along the second direction y and occupies most of the outer end boundary line 312 except the end portion thereof. The outer end boundary line second portion 312B is connected to the outer end boundary line first portion 312A and is located near the outer end boundary line 311 in the second direction y. The outer end boundary line second portion 312B is located inside the outer end boundary line first portion 312A in the first direction x. Further, the outer end boundary line second portion 312B is also connected to the outer end boundary line second portion 311B. In the depicted example, the outer end boundary line second portion 312B is inclined at an angle of 45 degrees with respect to the outer end boundary line first portion 311A when viewed in the thickness direction z. In
Although detailed illustration and description are omitted, the end portion of the outer end boundary line 311 near the outer end boundary line 313 is located on the inside in the second direction y, similarly to the end portion (the outer end boundary line second portion 311B) of the outer end boundary line 311 near the outer end boundary line 312. Further, the end portion of the outer end boundary line 313 near the outer end boundary line 311 is located on the inside in the first direction x, similarly to the end portion (the outer end boundary line second portion 312B) of the outer end boundary line 312 near the outer end boundary line 311. As a result, the corner portion of the outer end boundary line 311 and the outer end boundary line 313 (the upper left corner portion of
Although detailed illustration and description are omitted, the end portion of the outer end boundary line 314 near the outer end boundary line 313 is located on the inside in the second direction y, similarly to the end portion (the outer end boundary line second portion 311B) of the outer end boundary line 311 near the outer end boundary line 312. Further, the end portion of the outer end boundary line 313 near the outer end boundary line 314 is located on the inside in the first direction x, similarly to the end portion (the outer end boundary line second portion 312B) of the outer end boundary line 312 near the outer end boundary line 311. As a result, the corner portion of the outer end boundary line 313 and the outer end boundary line 314 (the lower left corner portion in
As shown in
The inner end boundary line 326 includes an inner end boundary line first portion 326A and an inner end boundary line second portion 326B. The inner end boundary line first portion 326A extends linearly along the second direction y and occupies most of the inner end boundary line 326 except for the end portion thereof. The inner end boundary line second portion 326B is connected to the inner end boundary line first portion 326A and is located near the inner end boundary line 325 in the second direction y. The inner end boundary line second portion 326B is located outside the inner end boundary line first portion 326A in the first direction x. Further, the inner end boundary line second portion 326B is also connected to the inner end boundary line second portion 325B. In the depicted example, the inner end boundary line second portion 326B is inclined at an angle of 45 degrees with respect to the inner end boundary line first portion 326A when viewed in the thickness direction z. In
As shown in
In this modification, in the step of forming the first insulating layer 31 and the step of forming the second insulating layer 33 in the manufacture of the semiconductor device, the shape of the first annular portion 310 and the shape of the second annular portion 330 are different from those of the above embodiment.
As shown in
According to the method for manufacturing the semiconductor device of this modification, after the second annular portion 330 is heat-treated, even in a case where the second annular portion 330 shrinks at the corner portion of the outer end boundary line 331 and the outer end boundary line 332, the state of covering the first insulating layer 31 (the first annular portion 310), which is a lower layer, is maintained, which may prevent the first insulating layer 31 from being exposed (see
The semiconductor device and the method of manufacturing the semiconductor device according to the present disclosure is not limited to the above-described embodiments. The specific configurations of various parts of the semiconductor device according to the present disclosure and the specific processing of various steps of the method of manufacturing the semiconductor device according to the present disclosure may be freely changed in design.
The present disclosure includes the configurations related to the following Supplementary Notes.
A semiconductor device including:
a semiconductor element (2) that includes an element main body (20) having an element main surface (201) facing one side in a thickness direction (z), and a first electrode (21) arranged on the element main surface (201);
a first insulating layer (31) that is arranged over a peripheral edge portion of the first electrode (21) and the element main surface (201) and includes a first annular portion (310) formed in an annular shape when viewed in the thickness direction (z); and
a second insulating layer (33) that is laminated on the first insulating layer (31), is made of a resin material, and includes a second annular portion (330) overlapping with the first annular portion (310) when viewed in the thickness direction (z),
wherein the first annular portion (310) includes a first outer end boundary line (311) extending in a first direction (x) orthogonal to the thickness direction (z), and a second outer end boundary line (312) connected to the first outer end boundary line (311) and extending in a second direction (y) orthogonal to both the thickness direction (z) and the first direction (x),
wherein the second annular portion (330) includes a third outer end boundary line (331) located outside the first outer end boundary line (311) in the second direction (y) and a fourth outer end boundary line (332) located outside the second outer end boundary line (312) in the first direction (z), when viewed in the thickness direction (z),
wherein an end portion of the third outer end boundary line (331) near the fourth outer end boundary line (332) protrudes outward in the second direction (y) as compared with a center portion in the first direction (x), and
wherein an end portion of the fourth outer end boundary line (332) near the third outer end boundary line (331) protrudes outward in the first direction (x) as compared with a center portion in the second direction (y).
The semiconductor device of Supplementary Note 1, wherein the first annular portion (310) includes a first inner end boundary line (321) located inside the first outer end boundary line (311) in the second direction (y) and a second inner end boundary line (322) connected to the first inner end boundary line (321) and located inside the second outer end boundary line (312) in the first direction (x), when viewed in the thickness direction (z), and
wherein the second annular portion (330) includes a third inner end boundary line (341) located inside the first inner end boundary line (321) in the second direction (y) and a fourth inner end boundary line (342) connected to the third inner end boundary line (341) and located inside the second inner end boundary line (322) in the first direction (x), when viewed in the thickness direction (z).
The semiconductor device of Supplementary Note 2, wherein the first annular portion (310) includes a fifth inner end boundary line (325) that is connected to the second inner end boundary line (322), is located inside the second inner end boundary line (322) in the first direction (x) when viewed in the thickness direction (z), and extends in the first direction (x), and a sixth inner end boundary line (326) that is connected to the fifth inner end boundary line (325), is located on an opposite side of the first inner end boundary line (321) with respect to the fifth inner end boundary line (325) in the second direction (y), and extends in the second direction (y),
wherein the second annular portion (330) includes a seventh inner end boundary line (345) connected to the fourth inner end boundary line (342) and located inside the fifth inner end boundary line (325) in the second direction (y) when viewed in the thickness direction (z), and an eighth inner end boundary line (346) located inside the sixth inner end boundary line (326) in the first direction (x) when viewed in the thickness direction (z),
wherein an end portion of the seventh inner end boundary line (345) near the eighth inner end boundary line (346) protrudes inward in the second direction (y) as compared with a center portion in the first direction (x), and
wherein an end portion of the eighth inner end boundary line (346) near the seventh inner end boundary line (345) protrudes inward in the first direction (x) as compared with a center portion in the second direction (y).
The semiconductor device of Supplementary Note 3, wherein the first annular portion (310) includes a fifth outer end boundary line (315) located outside the fifth inner end boundary line (325) in the second direction (y) and a sixth outer end boundary line (316) connected to the fifth outer end boundary line (315) and located outside the sixth inner end boundary line (326) in the first direction (x), when viewed in the thickness direction (z), and
wherein the second annular portion (330) includes a seventh outer end boundary line (335) located outside the fifth outer end boundary line (315) in the second direction (y) and an eighth outer end boundary line (336) connected to the seventh outer end boundary line (335) and located outside the sixth outer end boundary line (316) in the second direction (y), when viewed in the thickness direction (z).
The semiconductor device of any one of Supplementary Notes 1 to 4, wherein a thickness of the second insulating layer (33) is larger than a thickness of the first insulating layer (31).
The semiconductor device of any one of Supplementary Notes 1 to 5, wherein the second insulating layer (33) is made of a polyimide resin.
A method of manufacturing a semiconductor device, including:
a step of providing a substrate (2′) that includes a semiconductor layer (20′) having a main surface (201′) facing one side in a thickness direction (z), and a first electrode (21) arranged on the main surface (201′);
a step of forming a first insulating layer (31) on the side of the main surface (201′) of the substrate (2′); and
a step of forming a second insulating layer (33) on the side of the main surface (201′) of the substrate (2′),
wherein in the step of forming the first insulating layer (31), a first annular portion (310) arranged over a peripheral edge portion (211) of the first electrode (21) and the main surface (201′) and formed in an annular shape when viewed in the thickness direction (z) is formed, wherein the step of forming the second insulating layer (33) includes a step of arranging a second annular portion (330) that is formed in an annular portion overlapping with the first annular portion (310) when viewed in the thickness direction (z) and is made of a resin material, and a step of heating the second annular portion (330),
wherein the first annular portion (310) includes a first outer end boundary line (311) extending in a first direction (x) orthogonal to the thickness direction (z), and a second outer end boundary line (312) connected to the first outer end boundary line (311) and extending in a second direction (y) orthogonal to both the thickness direction (z) and the first direction (x),
wherein the second annular portion (330) includes a third outer end boundary line (331) located outside the first outer end boundary line (311) in the second direction (y), and a fourth outer end boundary line (332) located outside the second outer end boundary line (312) in the first direction, when viewed in the thickness direction (z),
wherein a first distance (D1), which is a distance between the first outer end boundary line (311) and the third outer end boundary line (331) in the second direction (y), is set to be larger at an end portion near the fourth outer end boundary line (332) than a center portion in the first direction (x), and
wherein a second distance (D2), which is a distance between the second outer end boundary line (312) and the fourth outer end boundary line (332) in the first direction (x), is set to be larger at an end portion near the third outer end boundary line (331) than a center portion in the second direction (y).
The method of Supplementary Note 7, wherein the third outer end boundary line (331) includes a third outer end boundary line first portion (331A) extending linearly along the first direction (x) and a third outer end boundary line second portion (331B) connected to the third outer end boundary line first portion (331A) and located outside the third outer end boundary line first portion (331A) in the second direction (y) and near the fourth outer end boundary line (332) in the first direction (x), and
wherein the fourth outer end boundary line (332) includes a fourth outer end boundary line first portion (332A) extending linearly along the second direction (y) and a fourth outer end boundary line second portion (332B) connected to both the fourth outer end boundary line first portion (332A) and the third outer end boundary line second portion (331B) and located outside the fourth outer end boundary line first portion (332A) in the first direction (x).
The method of Supplementary Note 8, wherein the third outer end boundary line second portion (331B) includes a third outer end boundary line straight line portion (331c) extending linearly along the first direction (x) and a third outer end boundary line connecting portion (331d) connected to both the third outer end boundary line first portion (331A) and the third outer end boundary line straight line portion (331c), and
wherein the fourth outer end boundary line second portion (332B) includes a fourth outer end boundary line straight line portion (332c) connected to the third outer end boundary line straight line portion (331c) and extending linearly along the second direction (y) and a fourth outer end boundary line connecting portion (332d) connected to both the fourth outer end boundary line first portion (332A) and the fourth outer end boundary line straight line portion (332c).
The method of Supplementary Note 7, wherein the first outer end boundary line (311) includes a first outer end boundary line first portion (311A) extending linearly along the first direction (x) and a first outer end boundary line second portion (311B) connected to the first outer end boundary line first portion (311A) and located inside the first outer end boundary line first portion (311A) in the second direction (y) and near the second outer end boundary line (312) in the first direction (x), and
wherein the second outer end boundary line (312) includes a second outer end boundary line first portion (312A) extending linearly along the second direction (y) and a second outer end boundary line second portion (312B) connected to both the second outer end boundary line first portion (312A) and the first outer end boundary line second portion (311B) and located inside the second outer end boundary line first portion (312A) in the first direction (x).
The method of any one of Supplementary Notes 7 to 10, wherein the first annular portion (310) includes a first inner end boundary line (321) located inside the first outer end boundary line (311) in the second direction (y) and a second inner end boundary line (322) connected to the first inner end boundary line (321) and located inside the second outer end boundary line (312) in the first direction (x), when viewed in the thickness direction (z), and
wherein the second annular portion (330) includes a third inner end boundary line (341) located inside the first inner end boundary line (321) in the second direction (y) and a fourth inner end boundary line (342) connected to the third inner end boundary line (341) and located inside the second inner end boundary line (322) in the first direction (x), when viewed in the thickness direction (z).
The method of Supplementary Note 11, wherein the first annular portion (310) includes a fifth inner end boundary line (325) that is connected to the second inner end boundary line (322), is located inside the second inner end boundary line (322) in the first direction (x) when viewed in the thickness direction (z), and extends in the first direction (x), and a sixth inner end boundary line (326) that is connected to the fifth inner end boundary line (325), is located on an opposite side of the first inner end boundary line (321) with respect to the fifth inner end boundary line (325) in the second direction (y), and extends in the second direction (y),
wherein the second annular portion (330) includes a seventh inner end boundary line (345) connected to the fourth inner end boundary line (342) and located inside the fifth inner end boundary line (325) in the second direction (y) when viewed in the thickness direction (z), and an eighth inner end boundary line (346) located inside the sixth inner end boundary line (326) in the first direction (x) when viewed in the thickness direction (z),
wherein a third distance (D3), which is a distance between the fifth inner end boundary line (325) and the seventh inner end boundary line (345) in the second direction (y), is set to be larger at an end portion near the eighth inner end boundary line (346) than a center portion in the first direction (x), and
wherein a fourth distance (D4), which is a distance between the sixth inner end boundary line (326) and the eighth inner end boundary line (346) in the first direction (x), is set to be larger at an end portion near the seventh inner end boundary line (345) than a center portion in the second direction (y).
The method of Supplementary Note 12, wherein the seventh inner end boundary line (345) includes a seventh inner end boundary line first portion (345A) extending linearly along the first direction (x) and a seventh inner end boundary line second portion (345B) connected to the seventh inner end boundary line first portion (345A) and located inside the seventh inner end boundary line first portion (345A) in the second direction (y) and near the eighth inner end boundary line (346) in the first direction (x), and
wherein the eighth inner end boundary line (346) includes an eighth inner end boundary line first portion (346A) extending linearly along the second direction (y) and an eighth inner end boundary line second portion (346B) connected to both the eighth inner end boundary line first portion (346A) and the seventh inner end boundary line second portion (345B) and located inside the eighth inner end boundary line first portion (346A) in the first direction (x).
The method of Supplementary Note 13, wherein the seventh inner end boundary line second portion (345B) includes a seventh inner end boundary line straight line portion (345c) extending linearly along the first direction (x) and a seventh inner end boundary line connecting portion (345d) connected to both the seventh inner end boundary line first portion (345A) and the seventh inner end boundary line straight line portion (345c), and
wherein the eighth inner end boundary line second portion (346B) includes an eighth inner end boundary line straight line portion (346c) connected to the seventh inner end boundary line straight line portion (345c) and extending linearly along the second direction (y) and an eighth inner end boundary line connecting portion (346d) connected to both the eighth inner end boundary line first portion (346A) and the eighth inner end boundary line straight line portion (346c).
The method of Supplementary Note 12, wherein the fifth inner end boundary line (325) includes a fifth inner end boundary line first portion (325A) extending linearly along the first direction (x) and a fifth inner end boundary line second portion (325B) connected to the fifth inner end boundary line first portion (325A) and located outside the fifth inner end boundary line first portion (325A) in the second direction (y) and near the sixth inner end boundary line (326) in the first direction (x), and
wherein the sixth inner end boundary line (326) includes a sixth inner end boundary line first portion (326A) extending linearly along the second direction (y) and a sixth inner end boundary line second portion (326B) connected to both the sixth inner end boundary line first portion (326A) and the fifth inner end boundary line second portion (325B) and located outside the sixth inner end boundary line first portion (326A) in the first direction (x).
The method of any one of Supplementary Notes 12 to 15, wherein the first annular portion (310) includes a fifth outer end boundary line (315) located outside the fifth inner end boundary line (325) in the second direction (y) and a sixth outer end boundary line (316) connected to the fifth outer end boundary line (315) and located outside the sixth inner end boundary line (326) in the first direction (x), when viewed in the thickness direction (z), and
wherein the second annular portion (330) includes a seventh outer end boundary line (335) located outside the fifth outer end boundary line (315) in the second direction (y) and an eighth outer end boundary line (336) connected to the seventh outer end boundary line (335) and located outside the sixth outer end boundary line (316) in the second direction (y), when viewed in the thickness direction (z).
The method of any one of Supplementary Notes 7 to 16, wherein a thickness of the second insulating layer (33) is larger than a thickness of the first insulating layer (31).
The method of any one of Supplementary Notes 7 to 17, wherein the second insulating layer (33) is made of a polyimide resin.
According to a semiconductor device of the present disclosure, it is possible to suppress an influence of shrinkage of a second annular portion which is a resin material portion.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosures. Indeed, the embodiments described herein may be embodied in a variety of other forms. Furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the disclosures. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosures.