Semiconductor Devices With Threshold Voltage Modulation Layer | Patent Publication Number 20220352180
US 20220352180 A1Publication DateNov 3, 2022
Original Assignee
Current AssigneeTaiwan Semiconductor Manufacturing Company
Inventor/ApplicantsShang-Rong Li
Shih-Hao Lin
Chih-Hsiang Huang
Chih-Chuan Yang
Ming-Shuan Li
Jui-Lin Chen
Shih-Hao Lin
Chih-Hsiang Huang
Chih-Chuan Yang
Ming-Shuan Li
Jui-Lin Chen
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