METHOD OF FORMING CONTACT STRUCTURE, METHOD OF FABRICATING SEMICONDUCTOR DEVICE, CONTACT STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME | Patent Publication Number 20230231027
US 20230231027 A1Publication DateJul 20, 2023
Original Assignee
Current AssigneeSk Hynix
Korea Institute Of Energy Research
Korea University Research And Business Foundation
Chungbuk National University
Korea Institute Of Energy Research
Korea University Research And Business Foundation
Chungbuk National University
Inventor/ApplicantsJoon-Ho OH
Jae Woo LEE
Hyun Seok LEE
Ka-Hyun KIM
Jae Woo LEE
Hyun Seok LEE
Ka-Hyun KIM
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