Biography | Dr. Steven H. Voldman is the first IEEE Fellow in the field of electrostatic discharge (ESD) for “Contributions in ESD protection in CMOS, Silicon On Insulator and Silicon Germanium Technology.” He received his B.S. in Engineering Science from University of Buffalo (1979); a first M.S. EE (1981) from Massachusetts Institute of Technology (MIT); a second degree EE Degree (Engineer Degree) from MIT; a MS Engineering Physics (1986) and a Ph.D in electrical engineering (EE) (1991) from University of Vermont under IBM's Resident Study Fellow program.
Voldman was a member of the semiconductor development of IBM for 25 years from 1982 to 2007. He also was a member of the development team of Qimonda, and Intersil Corporations. He was a consultant for Taiwan Semiconductor Manufacturing Corporation (TSMC) in Hsinchu, Taiwan, and for the Samsung Electronics Corporation in Dongtan, South Korea.
Steve Voldman was one of the first to be designated as a IBM Master Inventor. Dr. Steven H. Voldman also was awarded the title of IBM Top Inventor for three consecutive years for being one of the top ten inventors in the IBM Corporation. He is presently a recipient of 260 issued US patents and has written over 150 technical papers. At IBM, Dr. Voldman achieved over 67 IBM Invention Achievement Award plateaus.
Steven H. Voldman provides tutorials and lectures on inventions, innovations, and patents in Malaysia, Sri Lanka, Senegal, Swaziland, Benin and the United States. He initiated a lecture program to provide lectures and interaction to university faculty and students internationally, and has lectured to over 45 universities in the United States, Korea, Singapore, Taiwan, Malaysia, Philippines, Thailand, India, China, Senegal, Benin and Swaziland.
Since 2007, he has served as an expert witness in patent litigation; and has also founded a limited liability corporation (LLC) consulting business supporting patents, patent writing and patent litigation. In his LLC, S. Voldman served as an expert witness for cases on DRAM development, semiconductor development, integrated circuits, and electrostatic discharge in over ten cases. He was an expert witness for Hogan Lovell LLP, Dechert LLP, Quinn Emanuel Urqhuart and Sullivan LLP, Sydney and Austin LLP, to Latham and Watkins LLP.
Dr. Voldman is presently working on patent searches, patent drafting, office actions response, and preliminary amendments. He is presently writing patents for law firms in the United States. He provides consulting on patents, patent drafting, and patent portfolio development for small corporations in the United States.
Dr. Voldman also has written for Scientific American and is an author of ten books on technology. | |